Independent operation time of photodetectors of the (3—5)-μm spectral band based on InSb and CdHgTe heteroepitaxial structures

Abstract

The time of independent operation t_ind of indium antimonide photoresistors and photodiodes and photoresistors based on Cd_хHg_1–хTe (х ~ 0.3) heterostructures deeply cooled with a Joule–Thomson throttling system is investigated. The largest independent operation time (taut ≥ 28 s) was obtained for Cd_хHg_1–хTe (х ~ 0.3) photoresistors. Time t_ind of the photoresistors and photodiodes is found to be related to the temperature of transition of the semiconductor materials from the impurity region to the intrinsic region. The possibility of increasing time t_ind of the photodetectors by optimizing the requirements for the characteristics of InSb and Cd_хHg_1–хTe is discussed.