Atomic Layer Deposition of Thin Films onto 3D Nanostructures: The Effect of Wall Tilt Angle and Aspect Ratio of Trenches
- 作者: Fadeev A.V.1, Rudenko K.V.1
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隶属关系:
- Insitute of Physics and Technology, Russian Academy of Sciences
- 期: 卷 63, 编号 10 (2018)
- 页面: 1525-1532
- 栏目: Physical Electronics
- URL: https://ogarev-online.ru/1063-7842/article/view/202199
- DOI: https://doi.org/10.1134/S1063784218100092
- ID: 202199
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详细
A theoretical model predicting the spatial profile of a film grown on walls by atomic layer deposition (ALD) is developed. The possible initial nonverticality of trench walls and the dynamic variation of the aspect ratio of the structure in the process of film growth in nanosized trenches are considered in this model. The dependence of the resulting film thickness and conformity on ALD process parameters is studied theoretically.
作者简介
A. Fadeev
Insitute of Physics and Technology, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: AlexVFadeev@gmail.com
俄罗斯联邦, Moscow, 117218
K. Rudenko
Insitute of Physics and Technology, Russian Academy of Sciences
Email: AlexVFadeev@gmail.com
俄罗斯联邦, Moscow, 117218
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