Atomic Layer Deposition of Thin Films onto 3D Nanostructures: The Effect of Wall Tilt Angle and Aspect Ratio of Trenches
- Авторлар: Fadeev A.V.1, Rudenko K.V.1
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Мекемелер:
- Insitute of Physics and Technology, Russian Academy of Sciences
- Шығарылым: Том 63, № 10 (2018)
- Беттер: 1525-1532
- Бөлім: Physical Electronics
- URL: https://ogarev-online.ru/1063-7842/article/view/202199
- DOI: https://doi.org/10.1134/S1063784218100092
- ID: 202199
Дәйексөз келтіру
Аннотация
A theoretical model predicting the spatial profile of a film grown on walls by atomic layer deposition (ALD) is developed. The possible initial nonverticality of trench walls and the dynamic variation of the aspect ratio of the structure in the process of film growth in nanosized trenches are considered in this model. The dependence of the resulting film thickness and conformity on ALD process parameters is studied theoretically.
Негізгі сөздер
Авторлар туралы
A. Fadeev
Insitute of Physics and Technology, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: AlexVFadeev@gmail.com
Ресей, Moscow, 117218
K. Rudenko
Insitute of Physics and Technology, Russian Academy of Sciences
Email: AlexVFadeev@gmail.com
Ресей, Moscow, 117218
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