Atomic Layer Deposition of Thin Films onto 3D Nanostructures: The Effect of Wall Tilt Angle and Aspect Ratio of Trenches
- Авторы: Fadeev A.V.1, Rudenko K.V.1
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Учреждения:
- Insitute of Physics and Technology, Russian Academy of Sciences
- Выпуск: Том 63, № 10 (2018)
- Страницы: 1525-1532
- Раздел: Physical Electronics
- URL: https://ogarev-online.ru/1063-7842/article/view/202199
- DOI: https://doi.org/10.1134/S1063784218100092
- ID: 202199
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Аннотация
A theoretical model predicting the spatial profile of a film grown on walls by atomic layer deposition (ALD) is developed. The possible initial nonverticality of trench walls and the dynamic variation of the aspect ratio of the structure in the process of film growth in nanosized trenches are considered in this model. The dependence of the resulting film thickness and conformity on ALD process parameters is studied theoretically.
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Об авторах
A. Fadeev
Insitute of Physics and Technology, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: AlexVFadeev@gmail.com
Россия, Moscow, 117218
K. Rudenko
Insitute of Physics and Technology, Russian Academy of Sciences
Email: AlexVFadeev@gmail.com
Россия, Moscow, 117218
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