Localization of Excitations near a Thin Defect Layer with Nonlinear Properties, Separating Linear and Nonlinear Crystals
- Autores: Savotchenko S.E.1
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Afiliações:
- Sukhov Belgorod State Technological University
- Edição: Volume 64, Nº 9 (2019)
- Páginas: 1231-1236
- Seção: Theoretical and Mathematical Physics
- URL: https://ogarev-online.ru/1063-7842/article/view/204030
- DOI: https://doi.org/10.1134/S1063784219090159
- ID: 204030
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Resumo
It is shown that localized and quasi-local states exist near a thin defect layer with nonlinear properties, separating a linear medium from a Kerr-type nonlinear medium. Localized states are characterized by a monotonically decreasing field amplitude on both sides of the interface between the media. Quasi-local states are described by the field in the form of a standing wave in the linear medium and a monotonically decreasing field in the nonlinear medium. Contacts with nonlinear self-focusing and defocusing media are analyzed. The mathematical formulation of the proposed model is a system of linear and nonlinear Schrödinger equations with a potential simulating the thin defect layer, which is nonlinear relative to the field. Dispersion relations determining the energy of local and quasi-local states are obtained. The expressions for energy in explicit analytic form are indicated in the limiting cases and the conditions of their existence.
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Sobre autores
S. Savotchenko
Sukhov Belgorod State Technological University
Autor responsável pela correspondência
Email: savotchenkose@mail.ru
Rússia, Belgorod, 308012
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