Localization of Excitations near a Thin Defect Layer with Nonlinear Properties, Separating Linear and Nonlinear Crystals
- Авторлар: Savotchenko S.E.1
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Мекемелер:
- Sukhov Belgorod State Technological University
- Шығарылым: Том 64, № 9 (2019)
- Беттер: 1231-1236
- Бөлім: Theoretical and Mathematical Physics
- URL: https://ogarev-online.ru/1063-7842/article/view/204030
- DOI: https://doi.org/10.1134/S1063784219090159
- ID: 204030
Дәйексөз келтіру
Аннотация
It is shown that localized and quasi-local states exist near a thin defect layer with nonlinear properties, separating a linear medium from a Kerr-type nonlinear medium. Localized states are characterized by a monotonically decreasing field amplitude on both sides of the interface between the media. Quasi-local states are described by the field in the form of a standing wave in the linear medium and a monotonically decreasing field in the nonlinear medium. Contacts with nonlinear self-focusing and defocusing media are analyzed. The mathematical formulation of the proposed model is a system of linear and nonlinear Schrödinger equations with a potential simulating the thin defect layer, which is nonlinear relative to the field. Dispersion relations determining the energy of local and quasi-local states are obtained. The expressions for energy in explicit analytic form are indicated in the limiting cases and the conditions of their existence.
Негізгі сөздер
Авторлар туралы
S. Savotchenko
Sukhov Belgorod State Technological University
Хат алмасуға жауапты Автор.
Email: savotchenkose@mail.ru
Ресей, Belgorod, 308012
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