Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation
- Авторлар: Ivanov P.A.1, Grekhov I.V.1
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Мекемелер:
- Ioffe Physical Technical Institute
- Шығарылым: Том 61, № 2 (2016)
- Беттер: 240-243
- Бөлім: Solid State Electronics
- URL: https://ogarev-online.ru/1063-7842/article/view/196852
- DOI: https://doi.org/10.1134/S1063784216020134
- ID: 196852
Дәйексөз келтіру
Аннотация
The generation of high-voltage electrical pulses by generators based on 4H : SiC sharp-recovery drift diode is demonstrated. It is shown that the electron drift velocity saturation influences the shape of output pulses.
Негізгі сөздер
Авторлар туралы
P. Ivanov
Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021
I. Grekhov
Ioffe Physical Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021
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