Email this article Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation
- Authors: Ivanov P.A.1, Grekhov I.V.1
-
Affiliations:
- Ioffe Physical Technical Institute
- Issue: Vol 61, No 2 (2016)
- Pages: 240-243
- Section: Solid State Electronics
- URL: https://ogarev-online.ru/1063-7842/article/view/196852
- DOI: https://doi.org/10.1134/S1063784216020134
- ID: 196852
Cite item
Open Access
Access granted
Subscription Access
Abstract
The generation of high-voltage electrical pulses by generators based on 4H : SiC sharp-recovery drift diode is demonstrated. It is shown that the electron drift velocity saturation influences the shape of output pulses.
About the authors
P. A. Ivanov
Ioffe Physical Technical Institute
Author for correspondence.
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
I. V. Grekhov
Ioffe Physical Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
Supplementary files
