Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation
- 作者: Ivanov P.A.1, Grekhov I.V.1
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隶属关系:
- Ioffe Physical Technical Institute
- 期: 卷 61, 编号 2 (2016)
- 页面: 240-243
- 栏目: Solid State Electronics
- URL: https://ogarev-online.ru/1063-7842/article/view/196852
- DOI: https://doi.org/10.1134/S1063784216020134
- ID: 196852
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详细
The generation of high-voltage electrical pulses by generators based on 4H : SiC sharp-recovery drift diode is demonstrated. It is shown that the electron drift velocity saturation influences the shape of output pulses.
作者简介
P. Ivanov
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: Pavel.Ivanov@mail.ioffe.ru
俄罗斯联邦, Politekhnicheskaya ul. 26, St. Petersburg, 194021
I. Grekhov
Ioffe Physical Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
俄罗斯联邦, Politekhnicheskaya ul. 26, St. Petersburg, 194021
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