Email this article Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment
- Authors: Ergashov Y.S.1
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Affiliations:
- Tashkent State Technical University
- Issue: Vol 62, No 5 (2017)
- Pages: 777-780
- Section: Physics of Nanostructures
- URL: https://ogarev-online.ru/1063-7842/article/view/199427
- DOI: https://doi.org/10.1134/S1063784217050103
- ID: 199427
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Abstract
The variations in the composition and structure of CoSi2/Si(111) surface layers under Ar+ ion bombardment with subsequent annealing has been studied. It has been demonstrated that nanocluster phases enriched with Si atoms form on the CoSi2 surface at low doses D ≤ 1015 cm–2, and a pure Si nanofilm forms at high doses.
About the authors
Y. S. Ergashov
Tashkent State Technical University
Author for correspondence.
Email: yergashev@mail.ru
Uzbekistan, Tashkent, 100095
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