Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

Аннотация

The variations in the composition and structure of CoSi₂/Si(111) surface layers under Ar⁺ ion bombardment with subsequent annealing has been studied. It has been demonstrated that nanocluster phases enriched with Si atoms form on the CoSi₂ surface at low doses D ≤ 10¹⁵ cm^–2, and a pure Si nanofilm forms at high doses.