Автор туралы ақпарат

Grekhov, I. V.

Шығарылым	Бөлім	Атауы	Файл
Том 61, № 2 (2016)	Solid State Electronics	Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation
Том 61, № 3 (2016)	Solid State Electronics	Powerful diode nanosecond current opening switch made of p-silicon (p-SOS)
Том 62, № 1 (2017)	Short Communications	Analysis of the process of turning off an integrated thyristor with external MOSFET control
Том 62, № 5 (2017)	Short Communications	High-power subnanosecond silicon avalanche shaper
Том 62, № 11 (2017)	Solid State Electronics	Analysis of integrated thyristor switching-off by a reverse gate pulse current
Том 62, № 12 (2017)	Theoretical and Mathematical Physics	The Numerical Simulation of the Nanosecond Switching of a p-SOS Diode
Том 63, № 1 (2018)	Optics	Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes)
Том 63, № 6 (2018)	Short Communications	Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p⁺−i−n⁺ Diode
Том 64, № 3 (2019)	Solid State Electronics	Numerical and Experimental Study of an Optimized p-SOS Diode