Numerical and Experimental Study of an Optimized p-SOS Diode

Аннотация

We report on the results of experimental investigation and numerical simulation of switching of SOS diode with p⁺P₀n⁺ structure and with reduced thickness of P₀-base. The proposed 1D diffusion-drift model of electron–hole plasma dynamics is found to be in good agreement with the experiment. The reduction of the P₀-base thickness has allowed us to double the output pulse voltage with the same switching current density. This has been reached by a considerable reduction of switching losses as well as due to the formation of the domain of a strong quasi-rectangular electric field at the P₀n⁺ junction during the current interruption. As a result, output pulse amplitude considerably exceeds the static breakdown voltage of P₀n⁺ junction. This effect has been observed for the first time for high-voltage semiconductor opening switches.