Excitons in ZnO Quantum Wells


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Reflectance and photoluminescence spectra of the ZnO/Zn0.78Mg0.22O structures with ZnO quantum wells and thick ZnO and Zn0.78Mg0.22O layers have been thoroughly investigated at different temperatures and excitation intensities and wavelengths. All the observed spectral lines have been identified. It has been established that the built-in electric field does not affect the spectrum as strongly as was expected. The built-in field is apparently effectively screened by the carriers that have migrated to the bands from donor and acceptor levels. The parameters determining the exciton properties in zinc oxide have been estimated.

作者简介

M. Bataev

St. Petersburg State University

Email: Vladimir.Kochereshko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034

N. Filosofov

St. Petersburg State University

Email: Vladimir.Kochereshko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034

A. Serov

St. Petersburg State University

Email: Vladimir.Kochereshko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034

V. Agekyan

St. Petersburg State University

Email: Vladimir.Kochereshko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034

C. Morhain

Centre de Recherche sur I’Hetero-Epitaxie et ses Applications-CNRS

Email: Vladimir.Kochereshko@mail.ioffe.ru
法国, Valbonne, F-06560

V. Kochereshko

St. Petersburg State University; Ioffe Institute

编辑信件的主要联系方式.
Email: Vladimir.Kochereshko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034; St. Petersburg, 194021

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