Excitons in ZnO Quantum Wells
- 作者: Bataev M.N.1, Filosofov N.G.1, Serov A.Y.1, Agekyan V.F.1, Morhain C.2, Kochereshko V.P.1,3
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隶属关系:
- St. Petersburg State University
- Centre de Recherche sur I’Hetero-Epitaxie et ses Applications-CNRS
- Ioffe Institute
- 期: 卷 60, 编号 12 (2018)
- 页面: 2628-2633
- 栏目: Low-Dimensional Systems
- URL: https://ogarev-online.ru/1063-7834/article/view/204645
- DOI: https://doi.org/10.1134/S1063783418120077
- ID: 204645
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详细
Reflectance and photoluminescence spectra of the ZnO/Zn0.78Mg0.22O structures with ZnO quantum wells and thick ZnO and Zn0.78Mg0.22O layers have been thoroughly investigated at different temperatures and excitation intensities and wavelengths. All the observed spectral lines have been identified. It has been established that the built-in electric field does not affect the spectrum as strongly as was expected. The built-in field is apparently effectively screened by the carriers that have migrated to the bands from donor and acceptor levels. The parameters determining the exciton properties in zinc oxide have been estimated.
作者简介
M. Bataev
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034
N. Filosofov
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034
A. Serov
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034
V. Agekyan
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034
C. Morhain
Centre de Recherche sur I’Hetero-Epitaxie et ses Applications-CNRS
Email: Vladimir.Kochereshko@mail.ioffe.ru
法国, Valbonne, F-06560
V. Kochereshko
St. Petersburg State University; Ioffe Institute
编辑信件的主要联系方式.
Email: Vladimir.Kochereshko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034; St. Petersburg, 194021
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