Excitons in ZnO Quantum Wells
- Авторы: Bataev M.N.1, Filosofov N.G.1, Serov A.Y.1, Agekyan V.F.1, Morhain C.2, Kochereshko V.P.1,3
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Учреждения:
- St. Petersburg State University
- Centre de Recherche sur I’Hetero-Epitaxie et ses Applications-CNRS
- Ioffe Institute
- Выпуск: Том 60, № 12 (2018)
- Страницы: 2628-2633
- Раздел: Low-Dimensional Systems
- URL: https://ogarev-online.ru/1063-7834/article/view/204645
- DOI: https://doi.org/10.1134/S1063783418120077
- ID: 204645
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Аннотация
Reflectance and photoluminescence spectra of the ZnO/Zn0.78Mg0.22O structures with ZnO quantum wells and thick ZnO and Zn0.78Mg0.22O layers have been thoroughly investigated at different temperatures and excitation intensities and wavelengths. All the observed spectral lines have been identified. It has been established that the built-in electric field does not affect the spectrum as strongly as was expected. The built-in field is apparently effectively screened by the carriers that have migrated to the bands from donor and acceptor levels. The parameters determining the exciton properties in zinc oxide have been estimated.
Об авторах
M. Bataev
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
Россия, St. Petersburg, 199034
N. Filosofov
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
Россия, St. Petersburg, 199034
A. Serov
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
Россия, St. Petersburg, 199034
V. Agekyan
St. Petersburg State University
Email: Vladimir.Kochereshko@mail.ioffe.ru
Россия, St. Petersburg, 199034
C. Morhain
Centre de Recherche sur I’Hetero-Epitaxie et ses Applications-CNRS
Email: Vladimir.Kochereshko@mail.ioffe.ru
Франция, Valbonne, F-06560
V. Kochereshko
St. Petersburg State University; Ioffe Institute
Автор, ответственный за переписку.
Email: Vladimir.Kochereshko@mail.ioffe.ru
Россия, St. Petersburg, 199034; St. Petersburg, 194021
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