Effect of the parameters of pulsed anodic formation of porous silicon on its luminescent, paramagnetic, and electrotransport properties


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We present the data on changes in the properties of porous silicon formed at the current pulse modulation in the range of 0.1–1 Hz with the aim to modulate the properties of porous silicon in a nanoscale range. It is demonstrated that the use of the pulsed mode of formation of porous silicon with a period of a few tenths of a second can dramatically affect the photoluminescence quantum yield and other properties of the material. There is a correlation of the luminescent, electrotransport, and paramagnetic properties of porous silicon formed under different modes.

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E. Demidov

Lobachevsky State University

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Email: demidov@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

A. Abrosimov

Lobachevsky State University

Email: demidov@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

N. Demidova

Lobachevsky State University

Email: demidov@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

V. Karzanov

Lobachevsky State University

Email: demidov@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

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