Dislocation dynamics in solid solutions of covalent crystals
- 作者: Petukhov B.V.1
-
隶属关系:
- Institute of Crystallography
- 期: 卷 58, 编号 9 (2016)
- 页面: 1826-1830
- 栏目: Mechanical Properties, Physics of Strength, and Plasticity
- URL: https://ogarev-online.ru/1063-7834/article/view/198640
- DOI: https://doi.org/10.1134/S1063783416090262
- ID: 198640
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详细
The dislocation mechanism of solid solution strengthening of covalent semiconductor crystals has been studied. The change in the regularities of dislocation dynamics in solid solutions from those in the components of the solution is connected with the manifestation of the nonlinear drift of dislocation kinks. The theory developed suggests an explanation of specificities of the dislocation mobility in a Ge1–cSic solid solution.
作者简介
B. Petukhov
Institute of Crystallography
编辑信件的主要联系方式.
Email: petukhov@ns.crys.ras.ru
俄罗斯联邦, Leninskii pr. 59, Moscow, 119333
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