Gas release in the process of thermal treatment of sputtered Pb(Ti0.48Zr0.52)Ox films
- 作者: Znamenskii A.G.1, Ionov A.M.2, Marchenko V.A.1
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隶属关系:
- Institute of Microelectronics Technology and High-Purity Materials
- Institute of Solid State Physics
- 期: 卷 58, 编号 6 (2016)
- 页面: 1239-1246
- 栏目: Surface Physics and Thin Films
- URL: https://ogarev-online.ru/1063-7834/article/view/197886
- DOI: https://doi.org/10.1134/S1063783416060354
- ID: 197886
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详细
The conditions (regimes of deposition and thermal treatment) for gas bubble formation in ferroelectric Pb(Ti1–yZry)O3 films have been determined by thermal desorption and electron and optical micros-copy. A mechanism of bubble formation has been proposed. This mechanism rests upon the notion that lead can form oxides of the PbO2 type with a high oxygen content at relatively low temperatures and that these oxides break down with the release of oxygen to lower oxides of the PbO type upon subsequent heating. These ideas have been taken as the basis of a technique for the fabrication of Pb(Ti1–yZry)O3 films with a reduced (by an order of magnitude) density of through defects.
作者简介
A. Znamenskii
Institute of Microelectronics Technology and High-Purity Materials
Email: marchenk@iptm.ru
俄罗斯联邦, ul. Akademika Osip’yana 6, Chernogolovka, Moscow oblast, 142432
A. Ionov
Institute of Solid State Physics
Email: marchenk@iptm.ru
俄罗斯联邦, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
V. Marchenko
Institute of Microelectronics Technology and High-Purity Materials
编辑信件的主要联系方式.
Email: marchenk@iptm.ru
俄罗斯联邦, ul. Akademika Osip’yana 6, Chernogolovka, Moscow oblast, 142432
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