Dielectric Losses and Charge Transfer in Antimony-Doped TlGaS2 Single Crystal

Аннотация

Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS₂-based single crystals grown by the Bridgman–Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa_0.995Sb_0.005S₂ single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS₂ single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.