Temperature Dependence of the Lattice Parameters of Cu2 – xSe (0.03 ≤ x ≤ 0.23) Powders Fabricated by Mechanochemical Synthesis
- Авторлар: Ivanov A.A.1,2,3, Tarasova I.V.4, Bublik V.T.4, Akchurin R.K.1, Shchetinin I.V.4, Tabachkova N.Y.4, Pshenay-Severin D.A.5, Osvenskii V.B.3
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Мекемелер:
- Moscow Technological University (MIREA)
- National Research Centre Kurchatov Institute
- Joint Stock Company “Giredmet,”
- National University of Science and Technology (MISiS)
- Ioffe Institute, Russian Academy of Sciences
- Шығарылым: Том 60, № 11 (2018)
- Беттер: 2295-2299
- Бөлім: Semiconductors
- URL: https://ogarev-online.ru/1063-7834/article/view/204412
- DOI: https://doi.org/10.1134/S1063783418110100
- ID: 204412
Дәйексөз келтіру
Аннотация
Abstract—The Cu2 – xSe (0.03 ≤ x ≤ 0.23) powders fabricated by mechanochemical synthesis have been studied by X-ray diffraction. The in situ study has been carried out for the temperature dependences of the lattice parameters, the structures, and the phase compositions of the powders in the temperature range 25–350°C. The powder compositions are shown to differ from the charge compositions and are shifted to lower copper concentrations. The estimation of peak half-widths of the cubic β phase indicates an increase in the structure imperfection after the phase transition from the α phase to the β phase of Cu2 – xSe at ~140°C. It is shown that the superpositions of the subtraction solutions (copper vacancies) and interstitials solutions (copper atoms in interstitial sites), whose proportion is changed as a function of temperature and the deviation from stoichiometry, are in the thermodynamic equilibrium in the copper selenide solid solution at room temperature. The change in the slope of the dependence of the lattice parameter of the powder Cu2 – xSe samples on the composition (0.03 ≤ x ≤ 0.23) in the temperature range 25–350°C enables the suggestion that interstitial copper atom concentration increases with temperature and deviation from stoichiometry.
Авторлар туралы
A. Ivanov
Moscow Technological University (MIREA); National Research Centre Kurchatov Institute; Joint Stock Company “Giredmet,”
Email: D.Pshenay@mail.ru
Ресей, Moscow, 119454; Moscow, 123182; Moscow, 119017
I. Tarasova
National University of Science and Technology (MISiS)
Email: D.Pshenay@mail.ru
Ресей, Moscow, 119991
V. Bublik
National University of Science and Technology (MISiS)
Email: D.Pshenay@mail.ru
Ресей, Moscow, 119991
R. Akchurin
Moscow Technological University (MIREA)
Email: D.Pshenay@mail.ru
Ресей, Moscow, 119454
I. Shchetinin
National University of Science and Technology (MISiS)
Email: D.Pshenay@mail.ru
Ресей, Moscow, 119991
N. Tabachkova
National University of Science and Technology (MISiS)
Email: D.Pshenay@mail.ru
Ресей, Moscow, 119991
D. Pshenay-Severin
Ioffe Institute, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: D.Pshenay@mail.ru
Ресей, St. Petersburg, 194021
V. Osvenskii
Joint Stock Company “Giredmet,”
Email: D.Pshenay@mail.ru
Ресей, Moscow, 119017
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