Transport and magnetic properties of a Zn0.1Cd0.9GeAs2 + 10 wt % MnAs composite with magnetic clusters at high pressure
- Авторлар: Arslanov R.K.1, Arslanov T.R.1, Zalibekov U.Z.1, Fedorchenko I.V.2
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Мекемелер:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Kurnakov Institute of General and Inorganic Chemistry
- Шығарылым: Том 59, № 3 (2017)
- Беттер: 483-486
- Бөлім: Semiconductors
- URL: https://ogarev-online.ru/1063-7834/article/view/199831
- DOI: https://doi.org/10.1134/S1063783417030052
- ID: 199831
Дәйексөз келтіру
Аннотация
The temperature (T = 77–420 K) dependences of the electrical resistivity and the magnetization, the magnetic-field (H ≤ 5 kOe) and pressure (P ≤ 7 GPa) dependences of the resistivity, the Hall coefficient, and the magnetization have been measured in the Zn0.1Cd0.9GeAs2 + 10 wt % MnAs composite with the Curie temperature TC = 310 K. The magnetoresistive effect has been observed at high hydrostatic pressure to 7 GPa. At nearly room temperature, the pressure dependence of the magnetization demonstrated a transition from the ferromagnetic to paramagnetic state at P ~ 3.2 GPa that was accompanied by the semiconductor–metal phase transition.
Авторлар туралы
R. Arslanov
Amirkhanov Institute of Physics, Dagestan Scientific Center
Хат алмасуға жауапты Автор.
Email: arslanovr@gmail.com
Ресей, ul. M. Yaragskogo 94, Makhachkala, Dagestan, 367003
T. Arslanov
Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: arslanovr@gmail.com
Ресей, ul. M. Yaragskogo 94, Makhachkala, Dagestan, 367003
U. Zalibekov
Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: arslanovr@gmail.com
Ресей, ul. M. Yaragskogo 94, Makhachkala, Dagestan, 367003
I. Fedorchenko
Kurnakov Institute of General and Inorganic Chemistry
Email: arslanovr@gmail.com
Ресей, Leninskii pr. 31, Moscow, 119991
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