Photoinduced heterostructure in a vanadium dioxide film
- Авторлар: Semenov A.L.1
-
Мекемелер:
- Ulyanovsk State University
- Шығарылым: Том 59, № 2 (2017)
- Беттер: 351-354
- Бөлім: Phase Transitions
- URL: https://ogarev-online.ru/1063-7834/article/view/199718
- DOI: https://doi.org/10.1134/S1063783417020251
- ID: 199718
Дәйексөз келтіру
Аннотация
A photoinduced semiconductor–metal phase transition that occurs in a surface layer of vanadium dioxide film on an aluminum substrate within the time Δt < 1 ps has been studied theoretically. A nonthermal mechanism of the development of instability has been considered. It has been shown that a heterophase structure containing metallic and semiconductor layers is formed in the VO2 film. The phase transition time τ has been calculated as a function of the distance z from the film surface. Comparison with the experiment has been carried out.
Авторлар туралы
A. Semenov
Ulyanovsk State University
Хат алмасуға жауапты Автор.
Email: smnv@mail.ru
Ресей, Ulyanovsk, 432017
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