Specific features of the electronic, spin, and atomic structures of a topological insulator Bi2Te2.4Se0.6
- Авторлар: Filyanina M.V.1, Klimovskikh I.I.1, Eremeev S.V.1,2,3, Rybkina A.A.1, Rybkin A.G.1,4, Zhizhin E.V.1,4, Petukhov A.E.1,4, Rusinov I.P.1,3, Kokh K.A.1,3,5,6, Chulkov E.V.1,3,7, Tereshchenko O.E.1,3,7,8, Shikin A.M.1
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Мекемелер:
- St. Petersburg State University
- Institute of Strength Physics and Material Science
- Tomsk State University
- Resource Center “Physical Methods of Surface Investigation,”
- Institute of Geology and Mineralogy
- Novosibirsk State University
- Departamento de Física de Materiales UPV/EHU
- Institute of Semiconductor Physics
- Шығарылым: Том 58, № 4 (2016)
- Беттер: 779-787
- Бөлім: Low-Dimensional Systems
- URL: https://ogarev-online.ru/1063-7834/article/view/197317
- DOI: https://doi.org/10.1134/S1063783416040065
- ID: 197317
Дәйексөз келтіру
Аннотация
The specific features of the electronic and spin structures of a triple topological insulator Bi2Te2.4Se0.6, which is characterized by high-efficiency thermoelectric properties, have been studied with the use of angular- and spin-resolved photoelectron spectroscopy and compared with theoretical calculations in the framework of the density functional theory. It has been shown that the Fermi level for Bi2Te2.4Se0.6 falls outside the band gap and traverses the topological surface state (the Dirac cone). Theoretical calculations of the electronic structure of the surface have demonstrated that the character of distribution of Se atoms on the Te–Se sublattice practically does not influence the dispersion of the surface topological electronic state. The spin structure of this state is characterized by helical spin polarization. Analysis of the Bi2Te2.4Se0.6 surface by scanning tunnel microscopy has revealed atomic smoothness of the surface of a sample cleaved in an ultrahigh vacuum, with a lattice constant of ~4.23 Å. Stability of the Dirac cone of the Bi2Te2.4Se0.6 compound to deposition of a Pt monolayer on the surface is shown.
Авторлар туралы
M. Filyanina
St. Petersburg State University
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034
I. Klimovskikh
St. Petersburg State University
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034
S. Eremeev
St. Petersburg State University; Institute of Strength Physics and Material Science; Tomsk State University
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034; pr. Akademicheskii 2/4, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050
A. Rybkina
St. Petersburg State University
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034
A. Rybkin
St. Petersburg State University; Resource Center “Physical Methods of Surface Investigation,”
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034; Universitetskii pr. 35 lit. A, Petergof, St. Petersburg, 198504
E. Zhizhin
St. Petersburg State University; Resource Center “Physical Methods of Surface Investigation,”
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034; Universitetskii pr. 35 lit. A, Petergof, St. Petersburg, 198504
A. Petukhov
St. Petersburg State University; Resource Center “Physical Methods of Surface Investigation,”
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034; Universitetskii pr. 35 lit. A, Petergof, St. Petersburg, 198504
I. Rusinov
St. Petersburg State University; Tomsk State University
Хат алмасуға жауапты Автор.
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034; pr. Lenina 36, Tomsk, 634050
K. Kokh
St. Petersburg State University; Tomsk State University; Institute of Geology and Mineralogy; Novosibirsk State University
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034; pr. Lenina 36, Tomsk, 634050; pr. Akademika Koptyuga 3, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
E. Chulkov
St. Petersburg State University; Tomsk State University; Departamento de Física de Materiales UPV/EHU
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034; pr. Lenina 36, Tomsk, 634050; Basque Country
O. Tereshchenko
St. Petersburg State University; Tomsk State University; Departamento de Física de Materiales UPV/EHU; Institute of Semiconductor Physics
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034; pr. Lenina 36, Tomsk, 634050; Basque Country; ul. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. Shikin
St. Petersburg State University
Email: rusinovamarie@mail.ru
Ресей, Universitetskaya nab. 7–9, St. Petersburg, 199034
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