Anomalous Hall Effect in Frustrated Magnets
- Authors: Glushkov V.V.1,2, Anisimov M.A.1,3, Bogach A.V.1,3, Bozhko A.D.1, Demishev S.V.1,2, Krasnorussky V.N.1, Samarin A.N.1,4, Filipov V.B.5, Shitsevalova N.Y.5
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Affiliations:
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- National Research University Higher School of Economics
- National University of Science and Technology MISiS
- Moscow Institute of Physics and Technology
- Frantsevich Institute for Problems of Materials Science, NASU
- Issue: Vol 61, No 9 (2019)
- Pages: 1622-1626
- Section: Magnetism
- URL: https://ogarev-online.ru/1063-7834/article/view/206151
- DOI: https://doi.org/10.1134/S1063783419090075
- ID: 206151
Cite item
Abstract
Comparative analysis of Hall effect in substitutional solid solutions Ho0.5Lu0.5B12, Mn1 – xFexSi (0 ≤ x ≤ 1) and Eu1 – xGdxB6 (x < 0.04) is carried out at temperatures 2–300 K in magnetic fields up to 8 T. Anomalous contribution to the Hall effect \(\rho _{{xy}}^{{\text{A}}}\) ~ \({{\rho }_{{xx}}}M\) has been identified for systems with various types of magnetic frustration. The linear scaling \(\rho _{{xy}}^{{\text{A}}}\) ~ ρxx is detected in the resistivity range ρxx ~ 0.01–1 mΩ cm lying outside the range of applicability of the classical model of asymmetric scattering. It is associated with the increase in the amplitude of spin fluctuations in the paramagnetic phase of the investigated compounds with noncollinear magnetic structure. The topological contribution to the Hall effect is extracted for Ho0.5Lu0.5B12 and Eu1 – xGdxB6. Its amplitude is found to vary from 80 nΩ cm (Ho0.5Lu0.5B12) to 7.5 μΩ cm (Eu0.97Gd0.03B6).
Keywords
About the authors
V. V. Glushkov
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Research University Higher School of Economics
Author for correspondence.
Email: glushkov@lt.gpi.ru
Russian Federation, Moscow, 119991; Moscow, 101000
M. A. Anisimov
Prokhorov General Physics Institute of the Russian Academy of Sciences; National University of Science and Technology MISiS
Email: glushkov@lt.gpi.ru
Russian Federation, Moscow, 119991; Moscow, 101000
A. V. Bogach
Prokhorov General Physics Institute of the Russian Academy of Sciences; National University of Science and Technology MISiS
Email: glushkov@lt.gpi.ru
Russian Federation, Moscow, 119991; Moscow, 101000
A. D. Bozhko
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: glushkov@lt.gpi.ru
Russian Federation, Moscow, 119991
S. V. Demishev
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Research University Higher School of Economics
Email: glushkov@lt.gpi.ru
Russian Federation, Moscow, 119991; Moscow, 101000
V. N. Krasnorussky
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: glushkov@lt.gpi.ru
Russian Federation, Moscow, 119991
A. N. Samarin
Prokhorov General Physics Institute of the Russian Academy of Sciences; Moscow Institute of Physics and Technology
Email: glushkov@lt.gpi.ru
Russian Federation, Moscow, 119991; Dolgoprudny, Moscow oblast, 141700
V. B. Filipov
Frantsevich Institute for Problems of Materials Science, NASU
Email: glushkov@lt.gpi.ru
Ukraine, Kyiv, 03142
N. Yu. Shitsevalova
Frantsevich Institute for Problems of Materials Science, NASU
Email: glushkov@lt.gpi.ru
Ukraine, Kyiv, 03142
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