Response of the Dielectric Parameters of (110)SrTiO3 Films to the Formation of Ferroelectric Domains in Their Volume

Abstract

Three-layer SrRuO₃/SrTiO₃/SrRuO₃ heterostructures were grown by laser evaporation on (110)LaAlO₃ substrates. Photolithography and ion etching are used to form plane-parallel film capacitors, in which a layer of strontium titanate is placed between two film electrodes of strontium ruthenate. Data on the structure and orientation of the intermediate SrTiO₃ layer in the grown heterostructures were obtained. The variation of the dielectric constant and dielectric loss of the SrTiO₃ intermediate layer upon varying the temperature and intensity of an external electric field was studied.