To the Theory of Electronic States of an Epitaxial Graphene Bilayer
- Authors: Abdullaev G.O.1, Alisultanov Z.Z.1,2
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Affiliations:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- Dagestan State University
- Issue: Vol 61, No 3 (2019)
- Pages: 488-492
- Section: Graphenes
- URL: https://ogarev-online.ru/1063-7834/article/view/205120
- DOI: https://doi.org/10.1134/S1063783419030028
- ID: 205120
Cite item
Abstract
The energy spectrum of an epitaxial graphene bilayer is investigated. The most general case of spontaneous breaking of the P symmetry within and between the layers is considered. The influence of the gate voltage on the energy spectrum is studied. It is shown that a general profile of this influence substantially depends on the ratio between bandgaps corresponding to different layers. At a certain value of the Coulomb potential caused by the transition of a charge from the substrate, the bandgap collapses. These studies are carried out for two types of layer packing in the bilayer, namely, the AB and AA packings.
About the authors
G. O. Abdullaev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: zaur0102@gmail.com
Russian Federation, Makhachkala
Z. Z. Alisultanov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences; Dagestan State University
Author for correspondence.
Email: zaur0102@gmail.com
Russian Federation, Makhachkala; Makhachkala
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