Transmission Spectra of HgTe-Based Quantum Wells and Films in the Far-Infrared Range
- Authors: Savchenko M.L.1,2, Vasil’ev N.N.1,2, Yaroshevich A.S.2, Kozlov D.A.1,2, Kvon Z.D.1,2, Mikhailov N.N.2, Dvoretskii S.A.2
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Affiliations:
- Novosibirsk State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 60, No 4 (2018)
- Pages: 778-782
- Section: Optical Properties
- URL: https://ogarev-online.ru/1063-7834/article/view/202674
- DOI: https://doi.org/10.1134/S1063783418040285
- ID: 202674
Cite item
Abstract
Strained 80-nm-thick HgTe films belong to a new class of materials referred to as three-dimensional topological insulators (i.e., they have a bulk band gap and spin-nondegenerate surface states). Though there are a number of studies devoted to analysis of the properties of surface states using both transport and magnetooptical techniques in the THz range, the information about direct optical transitions between bulk and surface bands in these systems has not been reported. This study is devoted to the analysis of transmission and reflection spectra of HgTe films of different thicknesses in the far-infrared range recorded in a wide temperature range in order to detect the above interband transitions. A peculiarity at 15 meV, which is sensitive to a change in the temperature, is observed in spectra of both types. Detailed analysis of the data obtained revealed that this feature is related to absorption by HgTe optical phonons, while the interband optical transitions are suppressed.
About the authors
M. L. Savchenko
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: SavchenkoMaximL@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
N. N. Vasil’ev
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: SavchenkoMaximL@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
A. S. Yaroshevich
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: SavchenkoMaximL@gmail.com
Russian Federation, Novosibirsk, 630090
D. A. Kozlov
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: SavchenkoMaximL@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
Z. D. Kvon
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: SavchenkoMaximL@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
N. N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: SavchenkoMaximL@gmail.com
Russian Federation, Novosibirsk, 630090
S. A. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: SavchenkoMaximL@gmail.com
Russian Federation, Novosibirsk, 630090
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