Effect of the Crystal Structure on the Electrical Properties of Thin-Film PZT Structures
- Authors: Delimova L.A.1, Gushchina E.V.1, Zaitseva N.V.1, Seregin D.S.2, Vorotilov K.A.2, Sigov A.S.2
-
Affiliations:
- Ioffe Institute
- Moscow Technological University MIREA
- Issue: Vol 60, No 3 (2018)
- Pages: 553-558
- Section: Ferroelectricity
- URL: https://ogarev-online.ru/1063-7834/article/view/202362
- DOI: https://doi.org/10.1134/S1063783418030058
- ID: 202362
Cite item
Abstract
A new method of two-stage crystallization of lead zirconate–titanate (PZT) films using a seed sublayer with a low excess lead content has been proposed and realized. A seed layer with a strong texture of perovskite Pe(111) grains is formed from a solution with a lead excess of 0–5 wt %; the fast growth of the grains is provided by the deposition of the main film from a solution with high lead content. As a result, a strong Pe(111) texture with complete suppression of the Pe(100) orientation forms. An analysis of current–voltage dependences of the transient currents and the distributions of the local conductivity measured by the contact AFM method reveals two various mechanisms of current percolation that are determined by traps in the bulk and at the perovskite grain interfaces.
About the authors
L. A. Delimova
Ioffe Institute
Author for correspondence.
Email: ladel@mail.ioffe.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
E. V. Gushchina
Ioffe Institute
Email: ladel@mail.ioffe.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
N. V. Zaitseva
Ioffe Institute
Email: ladel@mail.ioffe.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
D. S. Seregin
Moscow Technological University MIREA
Email: ladel@mail.ioffe.ru
Russian Federation, pr. Vernadskogo 78, Moscow, 119454
K. A. Vorotilov
Moscow Technological University MIREA
Email: ladel@mail.ioffe.ru
Russian Federation, pr. Vernadskogo 78, Moscow, 119454
A. S. Sigov
Moscow Technological University MIREA
Email: ladel@mail.ioffe.ru
Russian Federation, pr. Vernadskogo 78, Moscow, 119454
Supplementary files
