Thermal conductivity of Cu2Se taking into account the influence of mobile copper ions
- Authors: Bulat L.P.1, Ivanov A.A.2,3, Osvenskii V.B.2, Pshenay-Severin D.A.4,5, Sorokin A.I.2
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Affiliations:
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- GIREDMET
- Moscow Technological University MIREA
- Ioffe Institute
- Peter the Great Saint-Petersburg Polytechnic University
- Issue: Vol 59, No 10 (2017)
- Pages: 2097-2102
- Section: Thermal Properties
- URL: https://ogarev-online.ru/1063-7834/article/view/201369
- DOI: https://doi.org/10.1134/S1063783417100080
- ID: 201369
Cite item
Abstract
The temperature dependence of the thermal conductivity of nanostructured samples of copper selenide prepared by mechanochemical synthesis from initial pure components in a planetary ball mill followed by spark plasma sintering has been studied. The thermal conductivity of nanostructured samples was measured in the temperature range 410–860 K. At 410–780 K, the thermal lattice conductivity κph varies insignificantly in the range 0.35–0.37 W/(m K). At a higher temperature T > 780 K, κph decreases to 0.19 W/(m K). To analyze the influence of mobile copper ions on the thermal conductivity of the lattice, molecular-dynamic calculations were performed using a classical interatomic potential obtained from ab initio calculations for the cubic β-Cu2Se modification. The simulation results demonstrate a high mobility of copper ions, and the calculated temperature dependence of the lattice thermal conductivity agrees with the experiment to 780 K. At a temperature T > 780 K, κph deviates from the calculation results, and this deviation is most pronounced in the nanostructured material. As a result, at the maximum measurement temperature, the lattice thermal conductivity decreased to ~0.19 W/(m K), which agrees with available data for nanostructured Cu2Se samples produced by various methods.
About the authors
L. P. Bulat
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: d.pshenay@mail.ru
Russian Federation, Kronverkskii pr. 49, St. Petersburg, 197101
A. A. Ivanov
GIREDMET; Moscow Technological University MIREA
Email: d.pshenay@mail.ru
Russian Federation, Bol’shoi Tolmachevskii per. 5, build. 1, Moscow, 119017; pr. Vernadskogo 78, Moscow, 119454
V. B. Osvenskii
GIREDMET
Email: d.pshenay@mail.ru
Russian Federation, Bol’shoi Tolmachevskii per. 5, build. 1, Moscow, 119017
D. A. Pshenay-Severin
Ioffe Institute; Peter the Great Saint-Petersburg Polytechnic University
Author for correspondence.
Email: d.pshenay@mail.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 29, St. Petersburg, 195251
A. I. Sorokin
GIREDMET
Email: d.pshenay@mail.ru
Russian Federation, Bol’shoi Tolmachevskii per. 5, build. 1, Moscow, 119017
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