Comparative analysis of the thickness and electrical conductivity of thin chalcogenide semiconductor films
- Авторы: Dan’shina V.V.1, Kalistratova L.F.1
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Учреждения:
- Omsk State Technical University
- Выпуск: Том 59, № 1 (2017)
- Страницы: 180-183
- Раздел: Surface Physics and Thin Films
- URL: https://ogarev-online.ru/1063-7834/article/view/199574
- DOI: https://doi.org/10.1134/S106378341701005X
- ID: 199574
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Аннотация
The structure and thickness of zinc and cadmium chalcogenide semiconductor films are studied by X-ray radiography. The film thickness is shown to be comparable with the half-value layer depth. The electrical conductivity of the films increases upon heating in the hydrogen atmosphere and decreases upon heating in carbon oxide. The opposite trend is observed in the ratio between the electrical conductivity and band gap of the initial and oxidized film surfaces.
Об авторах
V. Dan’shina
Omsk State Technical University
Автор, ответственный за переписку.
Email: danshina_v@mail.ru
Россия, Omsk, 644033
L. Kalistratova
Omsk State Technical University
Email: danshina_v@mail.ru
Россия, Omsk, 644033
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