Мақаланы E-mail арқылы жіберу Relaxation of the electric current in Si3N4: Experiment and numerical simulation
- Авторлар: Novikov Y.N.1, Gritsenko V.A.1,2
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 59, № 1 (2017)
- Беттер: 47-52
- Бөлім: Dielectrics
- URL: https://ogarev-online.ru/1063-7834/article/view/199459
- DOI: https://doi.org/10.1134/S1063783417010255
- ID: 199459
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Аннотация
The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.
Авторлар туралы
Yu. Novikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: nov@isp.nsc.ru
Ресей, pr. Akademika Lavrentieva 13, Novosibirsk, 630090
V. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: nov@isp.nsc.ru
Ресей, pr. Akademika Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
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