Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
- Авторы: Sobolev N.A.1, Kalyadin A.E.1, Aruev P.N.1, Zabrodskii V.V.1, Shek E.I.1, Shtel’makh K.F.1,2, Karabeshkin K.V.1
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Учреждения:
- Ioffe Physical-Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- Выпуск: Том 58, № 12 (2016)
- Страницы: 2499-2502
- Раздел: Impurity Centers
- URL: https://ogarev-online.ru/1063-7834/article/view/199358
- DOI: https://doi.org/10.1134/S1063783416120283
- ID: 199358
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Аннотация
The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 1013–1.7 × 1015 cm–2 and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 μm, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.
Об авторах
N. Sobolev
Ioffe Physical-Technical Institute
Автор, ответственный за переписку.
Email: nick@sobolev.ioffe.rssi.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. Kalyadin
Ioffe Physical-Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
P. Aruev
Ioffe Physical-Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
V. Zabrodskii
Ioffe Physical-Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
E. Shek
Ioffe Physical-Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
K. Shtel’makh
Ioffe Physical-Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: nick@sobolev.ioffe.rssi.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 29, St. Petersburg, 195251
K. Karabeshkin
Ioffe Physical-Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
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