Surface spin-polarized currents generated in topological insulators by circularly polarized synchrotron radiation and their photoelectron spectroscopy indication
- Authors: Shikin A.M.1, Klimovskikh I.I.1, Filyanina M.V.1, Rybkina A.A.1, Pudikov D.A.1, Kokh K.A.1,2, Tereshchenko O.E.1,2
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Affiliations:
- St. Petersburg State University
- Rzhanov Institute of Semiconductor Physics
- Issue: Vol 58, No 8 (2016)
- Pages: 1675-1686
- Section: Low-Dimensional Systems
- URL: https://ogarev-online.ru/1063-7834/article/view/198504
- DOI: https://doi.org/10.1134/S1063783416080266
- ID: 198504
Cite item
Abstract
A new method for generating spin-polarized currents in topological insulators has been proposed and investigated. The method is associated with the spin-dependent asymmetry of the generation of holes at the Fermi level for branches of topological surface states with the opposite spin orientation under the circularly polarized synchrotron radiation. The result of the generation of holes is the formation of compensating spin-polarized currents, the value of which is determined by the concentration of the generated holes and depends on the specific features of the electronic and spin structures of the system. The indicator of the formed spin-polarized current can be a shift of the Fermi edge in the photoelectron spectra upon photoexcitation by synchrotron radiation with the opposite circular polarization. The topological insulators with different stoichiometric compositions (Bi1.5Sb0.5Te1.8Se1.2 and PbBi2Se2Te2) have been investigated. It has been found that there is a correlation in the shifts and generated spin-polarized currents with the specific features of the electronic spin structure. Investigations of the graphene/Pt(111) system have demonstrated the possibility of using this method for other systems with a spin-polarized electronic structure.
About the authors
A. M. Shikin
St. Petersburg State University
Author for correspondence.
Email: ashikin@inbox.ru
Russian Federation, Universitetskaya nab. 7–9, St. Petersburg, 199034
I. I. Klimovskikh
St. Petersburg State University
Email: ashikin@inbox.ru
Russian Federation, Universitetskaya nab. 7–9, St. Petersburg, 199034
M. V. Filyanina
St. Petersburg State University
Email: ashikin@inbox.ru
Russian Federation, Universitetskaya nab. 7–9, St. Petersburg, 199034
A. A. Rybkina
St. Petersburg State University
Email: ashikin@inbox.ru
Russian Federation, Universitetskaya nab. 7–9, St. Petersburg, 199034
D. A. Pudikov
St. Petersburg State University
Email: ashikin@inbox.ru
Russian Federation, Universitetskaya nab. 7–9, St. Petersburg, 199034
K. A. Kokh
St. Petersburg State University; Rzhanov Institute of Semiconductor Physics
Email: ashikin@inbox.ru
Russian Federation, Universitetskaya nab. 7–9, St. Petersburg, 199034; pr. Akademika Lavrentieva 13, Novosibirsk, 630090
O. E. Tereshchenko
St. Petersburg State University; Rzhanov Institute of Semiconductor Physics
Email: ashikin@inbox.ru
Russian Federation, Universitetskaya nab. 7–9, St. Petersburg, 199034; pr. Akademika Lavrentieva 13, Novosibirsk, 630090
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