Biexciton Binding Energy in Spherical Quantum Dots with Γ8 Valence Band

详细

The biexciton binding energy in spherical CdSe/ZnSe quantum dots is calculated variationally in the framework of kp-perturbation theory. Smooth and abrupt confining potentials with the same localization area of carriers are compared for two limiting cases of light hole to heavy hole mass ratio β = mlh/mhh: β = 1 and β = 0. Accounting for correlations between carriers results in their polarized configuration and significantly increases the biexciton binding energy in comparison with the first order perturbation theory. For β = 0 in smooth confining potentials there are three nearby biexciton states separated by small energy gap between 1S3/2 and 1P3/2 hole states.

作者简介

A. Golovatenko

Ioffe Institute

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Email: sasha.pti@mail.ioffe.ru
俄罗斯联邦, St. Petersburg

M. Semina

Ioffe Institute

Email: sasha.pti@mail.ioffe.ru
俄罗斯联邦, St. Petersburg

A. Rodina

Ioffe Institute

Email: sasha.pti@mail.ioffe.ru
俄罗斯联邦, St. Petersburg

T. Shubina

Ioffe Institute

Email: sasha.pti@mail.ioffe.ru
俄罗斯联邦, St. Petersburg

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