Investigation of the thermal stability of metastable GeSn epitaxial layers


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A stack of five elastically strained metastable GeSn layers with a thickness of 200 nm each separated by Ge spacer layers with a thickness of 20 nm is grown on a (001) Si/Ge virtual substrate. The molar fraction of Sn in the GeSn layers is 0.005, 0.034, 0.047, 0.072, and 0.10. After growth the structure is subjected to thermal annealing for 2 min at a temperature of 400°C. It is demonstrated that during the course of annealing the GeSn alloy, along with plastic relaxation, undergoes phase separation; this phase separation begins before the end of plastic relaxation. The structural degradation of the GeSn layers increases with increasing concentration of Sn accumulated on the structure surface in the form of an amorphous layer.

作者简介

V. Martovitsky

Lebedev Physical Institute

Email: aklekovkinbox@gmail.com
俄罗斯联邦, Moscow, 119991

Yu. Sadofyev

Lebedev Physical Institute; National Research Nuclear University “Moscow Engineering Physics Institute,”

Email: aklekovkinbox@gmail.com
俄罗斯联邦, Moscow, 119991; Moscow, 115409

A. Klekovkin

Lebedev Physical Institute

编辑信件的主要联系方式.
Email: aklekovkinbox@gmail.com
俄罗斯联邦, Moscow, 119991

V. Saraikin

Lukin State Research Institute of Physical Problems

Email: aklekovkinbox@gmail.com
俄罗斯联邦, Zelenograd, 124460

I. Vasil’evskii

National Research Nuclear University “Moscow Engineering Physics Institute,”

Email: aklekovkinbox@gmail.com
俄罗斯联邦, Moscow, 115409

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