Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium


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Pd–oxide–InP (MOS) structures are fabricated, and their physical and photoelectric properties in a hydrogen atmosphere are investigated. It is established that a decrease in photovoltage of the structure and a large increase in photocurrent in the circuit are observed under the pulsed effect of hydrogen on the structure with a palladium layer illuminated by a light-emitting diode (LED of the wavelength λ = 0.9 μm). The kinetics and mechanism of the variation in the photovoltage and photocurrent are considered. It is assumed that the photovoltage decreases because of the ionization of hydrogen atoms in the Pd layer, and the photocurrent increases due to the thermionic emission of nonequilibrium electrons from the Pd layer into the semiconductor. On the basis of results of the investigations, the sensitive element for an optoelectronic hydrogen sensor is developed.

作者简介

A. Imenkov

Ioffe Physical–Technical Institute

Email: eagr.iropt7@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

E. Grebenshchikova

Ioffe Physical–Technical Institute

编辑信件的主要联系方式.
Email: eagr.iropt7@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

V. Shutaev

Ioffe Physical–Technical Institute; St. Petersburg State Polytechnical University

Email: eagr.iropt7@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 195251

A. Ospennikov

Russian Institute of Radionavigation and Time

Email: eagr.iropt7@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 191124

V. Sherstnev

Ioffe Physical–Technical Institute

Email: eagr.iropt7@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

Yu. Yakovlev

Ioffe Physical–Technical Institute

Email: eagr.iropt7@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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