Отправить статью по E-mail Polarized Retroreflection from Nanoporous III–V Semiconductors
- Авторы: Prislopski S.Y.1, Gaponenko S.V.1, Monaico E.2, Sergentu V.V.3, Tiginyanu I.M.2
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Учреждения:
- Stepanov Institute of Physics, National Academy of Sciences of Belarus
- National Center for Materials Study and Testing, Technical University of Moldova
- Institute of Applied Physics of the Academy of Sciences of Moldova
- Выпуск: Том 52, № 16 (2018)
- Страницы: 2068-2069
- Раздел: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION
- URL: https://ogarev-online.ru/1063-7826/article/view/205339
- DOI: https://doi.org/10.1134/S1063782618160248
- ID: 205339
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Аннотация
“Retroreflected light with strong linear polarization coinciding with that of the incident beams is detected from strongly absorbing nanoporous III–V semiconductors. Because of high polarization of retroreflected waves we assume that coherent backscattering is the underlying physical mechanism of this phenomenon”.
Об авторах
S. Prislopski
Stepanov Institute of Physics, National Academy of Sciences of Belarus
Автор, ответственный за переписку.
Email: s.prislopski@ifanbel.bas-net.by
Белоруссия, Minsk, 220072
S. Gaponenko
Stepanov Institute of Physics, National Academy of Sciences of Belarus
Email: s.prislopski@ifanbel.bas-net.by
Белоруссия, Minsk, 220072
E. Monaico
National Center for Materials Study and Testing, Technical University of Moldova
Email: s.prislopski@ifanbel.bas-net.by
Молдавия, Chisinau, MD-2004
V. Sergentu
Institute of Applied Physics of the Academy of Sciences of Moldova
Email: s.prislopski@ifanbel.bas-net.by
Молдавия, Chisinau, MD-2028
I. Tiginyanu
National Center for Materials Study and Testing, Technical University of Moldova
Email: s.prislopski@ifanbel.bas-net.by
Молдавия, Chisinau, MD-2004
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