Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon
- Авторы: Zhukavin R.K.1, Kovalevsky K.A.1, Orlov M.L.1, Tsyplenkov V.V.1, Hübers H.2,3, Dessmann N.3, Kozlov D.V.1, Shastin V.N.1,4
-
Учреждения:
- Institute for Physics of Microstructures
- DLR Institute of Optical Sensor Systems
- Institute of Physics
- Lobachevsky State University of Nizhny Novgorod
- Выпуск: Том 50, № 11 (2016)
- Страницы: 1458-1462
- Раздел: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://ogarev-online.ru/1063-7826/article/view/198315
- DOI: https://doi.org/10.1134/S1063782616110270
- ID: 198315
Цитировать
Аннотация
Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO2 laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature radiation is used as the probe radiation. Low stress (less than 0.5 kbar) is shown to reduce losses in the terahertz region by 20%. The main contribution to absorption modulation at zero and low stress is made by A+ centers. Intersubband free hole transitions additionally contribute to terahertz absorption at higher stress. These contributions can be minimized by compensation.
Об авторах
R. Zhukavin
Institute for Physics of Microstructures
Автор, ответственный за переписку.
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603087
K. Kovalevsky
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603087
M. Orlov
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603087
V. Tsyplenkov
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603087
H.-W. Hübers
DLR Institute of Optical Sensor Systems; Institute of Physics
Email: zhur@ipmras.ru
Германия, Berlin, 12489; Berlin, 12489
N. Dessmann
Institute of Physics
Email: zhur@ipmras.ru
Германия, Berlin, 12489
D. Kozlov
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603087
V. Shastin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603087; Nizhny Novgorod, 603950
Дополнительные файлы
