Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields
- Autores: Lukyanova L.N.1, Boikov Y.A.1, Usov O.A.1, Danilov V.A.1, Volkov M.P.1
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Afiliações:
- Ioffe Institute
- Edição: Volume 51, Nº 7 (2017)
- Páginas: 843-846
- Seção: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://ogarev-online.ru/1063-7826/article/view/200150
- DOI: https://doi.org/10.1134/S1063782617070259
- ID: 200150
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Resumo
The temperature and magnetic-field dependences of the galvanomagnetic properties of n-Bi2Te3 heteroepitaxial films in magnetic fields to 14 T at low temperatures are studied. It is shown that steps in the magnetic-field dependences of the quantum Hall effect and the plateau in the temperature dependences of the magnetoresistance of films are caused by topological surface states of Dirac fermions.
Sobre autores
L. Lukyanova
Ioffe Institute
Autor responsável pela correspondência
Email: lidia.lukyanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
Yu. Boikov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
O. Usov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Danilov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
M. Volkov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
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