Thermoelectric properties of InSb〈Zn〉 in nanoporous glass

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

Nanowire structures of zinc-doped indium antimonide are fabricated. These structures are formed in porous glass with characteristic pore sizes of ~7 nm. The temperature dependences of the electrical conductivity, Seebeck coefficient, and current–voltage characteristics are studied. An increase in the InSb Seebeck coefficient in porous glass in comparison with that of the bulk material is detected for the first time.

Sobre autores

O. Uryupin

Ioffe Institute

Autor responsável pela correspondência
Email: O.uryupin@mail.ioffe.ru
Rússia, St. Petersburg, 194021

A. Shabaldin

Ioffe Institute

Email: O.uryupin@mail.ioffe.ru
Rússia, St. Petersburg, 194021

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2017