Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide


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A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC)1–x(AlN)x structures. The results of calculations are compared to experimental data.

Sobre autores

V. Altuhov

Institute of Service, Tourism and Design (Branch)

Autor responsável pela correspondência
Email: altukhovv@mail.ru
Rússia, pr. 40 Let Oktyabrya 56, Pyatigorsk, 357500

I. Kasyanenko

Institute of Service, Tourism and Design (Branch)

Email: altukhovv@mail.ru
Rússia, pr. 40 Let Oktyabrya 56, Pyatigorsk, 357500

A. Sankin

Institute of Service, Tourism and Design (Branch)

Email: altukhovv@mail.ru
Rússia, pr. 40 Let Oktyabrya 56, Pyatigorsk, 357500

B. Bilalov

Dagestan State Technical University

Email: altukhovv@mail.ru
Rússia, pr. Imama Shamilya 70, Makhachkala, 367015

A. Sigov

Moscow State Technical University of Radio Engineering, Electronics, and Automation

Email: altukhovv@mail.ru
Rússia, pr. Vernadskogo 78, Moscow, 119454

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