High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy
- Авторлар: Levin R.V.1, Vlasov A.S.1, Smirnov A.N.1, Pushnyi B.V.1
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Мекемелер:
- Ioffe Institute
- Шығарылым: Том 53, № 12 (2019)
- Беттер: 1563-1567
- Бөлім: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://ogarev-online.ru/1063-7826/article/view/207341
- DOI: https://doi.org/10.1134/S1063782619160152
- ID: 207341
Дәйексөз келтіру
Аннотация
The results of studies of nominally undoped epitaxial p-GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50 are reported. At the ratio TMSb/TEGa = 50, GaSb epitaxial layers, whose resistivity is 400 Ω cm, are produced. It is shown that, for such layers, the crystal quality assessed by several methods remains comparable to the quality of n-GaSb substrates used for the growth of nominally undoped GaSb layers.
Негізгі сөздер
Авторлар туралы
R. Levin
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: Lev@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
A. Vlasov
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
A. Smirnov
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
B. Pushnyi
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
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