Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

Авторлар туралы

I. Shtrom

St. Petersburg Academic University; Institute for Analytical Instrumentation; St. Petersburg State University

Хат алмасуға жауапты Автор.
Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 199034

N. Filosofov

St. Petersburg State University

Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 199034

V. Agekian

St. Petersburg State University

Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 199034

M. Smirnov

St. Petersburg State University

Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 199034

A. Serov

St. Petersburg State University

Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 199034

R. Reznik

St. Petersburg Academic University; Institute for Analytical Instrumentation; ITMO University

Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101

K. Kudryavtsev

Institute for Physics of Microstructures of the Russian Academy of Sciences

Email: igorstrohm@mail.ru
Ресей, Nizhny Novgorod, 603950

G. Cirlin

St. Petersburg Academic University; Institute for Analytical Instrumentation; ITMO University

Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Pleiades Publishing, Ltd., 2018