Мақаланы E-mail арқылы жіберу Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells
- Авторлар: Fadeev M.A.1,2, Varavin V.S.3, Mikhailov N.N.3,4, Dvoretsky S.A.3, Gavrilenko V.I.1,2, Teppe F.5, Kozlov D.V.1,2, Rumyantsev V.V.1,2, Morozov S.V.1,2, Kadykov A.M.1,5
-
Мекемелер:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Laboratoire Charles Coulomb (L2C)
- Шығарылым: Том 50, № 12 (2016)
- Беттер: 1662-1668
- Бөлім: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://ogarev-online.ru/1063-7826/article/view/199046
- DOI: https://doi.org/10.1134/S1063782616120113
- ID: 199046
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
A long-wavelength band caused by transitions between states related to the valence band is detected in the photoconductivity spectra of HgyTe1 – y/CdxHg1 – xTe (CMT) structures with quantum wells. The energy states of mercury vacancies in quantum wells of CMT structures is calculated taking into account a chemical shift. It is shown that the long-wavelength band observed in the photoconductivity spectra of these structures is associated with the ionization of divalent acceptor centers which are such vacancies.
Авторлар туралы
M. Fadeev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: dvkoz@ipmras.ru
Ресей, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: dvkoz@ipmras.ru
Ресей, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
S. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: dvkoz@ipmras.ru
Ресей, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
V. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
F. Teppe
Laboratoire Charles Coulomb (L2C)
Email: dvkoz@ipmras.ru
Франция, Montpellier
D. Kozlov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: dvkoz@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
V. Rumyantsev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
S. Morozov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
A. Kadykov
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C)
Email: dvkoz@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950; Montpellier
Қосымша файлдар
