Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers
- Авторлар: Danilov L.V.1, Petukhov A.A.1, Mikhailova M.P.1, Zegrya G.G.1, Ivanov E.V.1, Yakovlev Y.P.1
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Мекемелер:
- Ioffe Physical–Technical Institute
- Шығарылым: Том 50, № 6 (2016)
- Беттер: 778-784
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://ogarev-online.ru/1063-7826/article/view/197253
- DOI: https://doi.org/10.1134/S1063782616060038
- ID: 197253
Дәйексөз келтіру
Аннотация
The electroluminescent properties of a light-emitting diode n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers are studied in the temperature range of 290–470 K. An atypical temperature increase in the power of the long-wavelength luminescence band with an energy of 0.3 eV is experimentally observed. As the temperature increases to 470 K, the optical radiation power increases by a factor of 1.5–2. To explain the extraordinary temperature dependence of the radiation power, the recombination and carrier transport processes are theoretically analyzed in the heterostructure under study.
Авторлар туралы
L. Danilov
Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Petukhov
Ioffe Physical–Technical Institute
Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
M. Mikhailova
Ioffe Physical–Technical Institute
Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
G. Zegrya
Ioffe Physical–Technical Institute
Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
E. Ivanov
Ioffe Physical–Technical Institute
Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
Yu. Yakovlev
Ioffe Physical–Technical Institute
Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
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