Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers


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Аннотация

The electroluminescent properties of a light-emitting diode n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers are studied in the temperature range of 290–470 K. An atypical temperature increase in the power of the long-wavelength luminescence band with an energy of 0.3 eV is experimentally observed. As the temperature increases to 470 K, the optical radiation power increases by a factor of 1.5–2. To explain the extraordinary temperature dependence of the radiation power, the recombination and carrier transport processes are theoretically analyzed in the heterostructure under study.

Авторлар туралы

L. Danilov

Ioffe Physical–Technical Institute

Хат алмасуға жауапты Автор.
Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. Petukhov

Ioffe Physical–Technical Institute

Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

M. Mikhailova

Ioffe Physical–Technical Institute

Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

G. Zegrya

Ioffe Physical–Technical Institute

Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

E. Ivanov

Ioffe Physical–Technical Institute

Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

Yu. Yakovlev

Ioffe Physical–Technical Institute

Email: danleon84@mail.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

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