On the propagation of charge carriers fluxes in the thin layer of a plane-parallel solid-state structure with scattering at the boundaries of the layer taken into account

Abstract

The composition of the thin layer of a plane-parallel solid-state structure affects the propagation of differential charge carriers fluxes in the thickness of the layer and through it. Scattering of these fluxes at the boundaries of the thin layer affects also the distribution function of charge carriers. This scattering is correctly taken into account in integrated boundary conditions for the kinetic equation. For a plane-parallel layer, the kinetic equation (in the approximation of the relaxation time) is reduced to a convenient form, which describes the propagation of differential fluxes in the thickness of the layer. The solution for thick and thin layers of different types (metal, insulator, semiconductor) is analyzed. Practically important problems, in which the obtained solutions can be effectively used, are specified.