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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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P

Prischepa, S. L.
Prislopski, S. Ya.
Pritchin, S. E.
Privezentsev, V. V.
Prokhorenkov, D. S.
Prokhorov, D. S.
Prokofiev, A. A.
Prokofieva, L. V.
Prokopos-Chouliaras, F.
Prokopova, T. V.
Prokopyev, S. L.
Prokoshin, V.
Proshina, O. V.
Prosvirin, I. P.
Protasov, D. Yu.
Protogenov, A. P.
Proyavin, M. D.
Pruchkina, A. A.
Prudaev, I. A.
Prutskij, T.
Prutskij, Tatiana
Pryadko, L. P.
Przhiyalkovskii, D. V.
Pshenay-Severin, D. A.
Puchnina, S. V.

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