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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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P

Platonov, A. V.
Ploog, K. H.
Plyatsko, S. V.
Plyusnin, V. F.
Poddubny, A. N.
Podgornykh, S. M.
Podkopaev, O. I.
Podlesny, I. V.
Podlivaev, A. I.
Podolska, N. I.
Podoskin, A. A.
Podust, G. P.
Pogoreltsev, A. I.
Pogosov, A. G.
Pohl, A.
Pokhabov, D. A.
Poklonskaya, O. N.
Poklonski, N. A.
Pokotilo, Yu. M.
Pokrova, S. V.
Pokrovskiy, P. V.
Pokutnyi, S. I.
Polevich, S. A.
Polischuk, O. V.
Polokhin, A. A.

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