Informaçao sobre o Autor
Balakshin, Yu. V.
| Edição | Seção | Título | Arquivo |
| Volume 51, Nº 6 (2017) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Study of the distribution profile of iron ions implanted into silicon | |
| Volume 53, Nº 6 (2019) | Surfaces, Interfaces, and Thin Films | Features of Defect Formation in Nanostructured Silicon under Ion Irradiation | |
| Volume 53, Nº 8 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon | |
| Volume 53, Nº 12 (2019) | Carbon Systems | Modification of Carbon-Nanotube Wettability by Ion Irradiation |