Автор туралы ақпарат
Shreter, Y. G.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 51, № 1 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire | |
| Том 52, № 7 (2018) | Physics of Semiconductor Devices | Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency | |
| Том 53, № 1 (2019) | Physics of Semiconductor Devices | Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well |