Informaçao sobre o Autor
Volkov, V. V.
| Edição | Seção | Título | Arquivo |
| Volume 50, Nº 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
| Volume 52, Nº 10 (2018) | Physics of Semiconductor Devices | Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs |