Author Details
Nikolaev, V. I.
| Issue | Section | Title | File |
| Vol 50, No 4 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy | |
| Vol 50, No 7 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates | |
| Vol 53, No 6 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy |